VLSI

1. A 0.18μm CMOS process has the following transistor characteristics:

NMOS tox = 4.1x10-9 m, VTN0 = 0.35V, μn0 = 327 cm2/V-s

PMOS tox = 4.1x10-9 m, VTP0 = -0.41V, μp0 = 128 cm2/V-s

(a) Plot the IDS vs. VDS curves for NMOS (W=0.3μm, L=0.18μm), VGS=0, 0.9V, and 1.8V

PMOS (W=0.3μm, L=0.18μm), VGS=0, -0.9V, and -1.8V

2.