EE lab Homework
Ald7mi75
ece220l_exp6_v2-2.docx
CALIFORNIA STATE POLYTECHNIC UNIVERITY, POMONA
Electrical and Computer Engineering Department
ECE 220 Lab Experiment #6
MOSFET Transistor Current-Voltage Characteristics
Objective:
To study the transfer characteristics of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) through laboratory experimentation.
Pre-Lab:
Acquire the necessary parts to perform the experiment. Note the instructor will supply the MOSFET.
List of Parts:
1. Obtain a CD4007 integrated circuit from the instructor.
Procedure:
1) To determine the relationship between the drain current ID and the gate-source voltage VGS for an N-Channel MOSFET, construct the circuit in Figure 1, using a 1K resistor. Connect pin 14 to 10V and pin 7 (the body) to 0V. Apply a sinusoidal waveform varying from 0 to 5V with a frequency of roughly 1kHz to Vin so that Vin is swept from 0 to 5V. Take measurements to form a plot of ID vs Vgs. From this curve determine VTN.
2) To determine the relationship between the drain current ID and the drain-source voltage, VDS, for an N-Channel MOSFET, connect the circuit in Figure 2 using the MOSFET and a 1Kohm resistor. Connect pin 14 to 10V and pin 7 (the body) to 0V. Adjust the gate-source voltage to VTN + 1V. Vary Vin from 0 to 10V using a function generator (~1kHz again). Take measurements to plot ID vs Vds.
3) Repeat Step #2 for additional values of VGS = VTH + 1.25V, VGS = VTH + 1.5V, VGS = VTH + 1.75V, VGS = VTH + 2V (You should have 5 traces, including those from step 2)
Figure 2
Figure 1
Author: A. Mittskus modified by B. Olson
R
Vgs
Vin
Vin
R
Vin
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