paraphrase and re-write the whole thing in your own words, .. change and re-write the whole THING. Keep the numbers the same.

INTRODUCTION

The purpose of this lab is to study the characteristic of an N-Type MOSFET.

PROCEDURES

Construct the circuit provided,

Set DC power supply VDD to zero, then slowly increase VDD until V1=0.1V, record the value of VDD and Vgs. Increase VDD by 0.5V and record the value of VGS.

In order to provide a higher accuracy, data point 0.7-1.6 is added during the experiment. The point VDD=2.1 is where the voltage across the resistor (V1) equal to 0.1V.

ANALYSIS:

By analysis the circuit, Vds = Vgs is obviously. Also by analysis the circuit, Vdd=R*iD+Vds can be easily conducted. By these two functions, iD can be calculated only using the values measure during the experiment, which is Vdd and Vgs.

The above chart is id versus Vgs with trend line, where id=0 Vgs is approximately 1.38V.

According to the formula , when id =0, Vgs=Vtn, therefore, the threshold voltage Vtn=1.38V.

And also from the formula with Vtn is known, kn can be calculated. In this experiment, the Kn=42.09.

CONCLUSION

In this lab, the characteristic of the MOSFET is studied. For a high accuracy, a several data point were added in the original data sheet, as a result, a better approximation of the threshold voltage Vtn can be conducted. However, the first 3 points were irrelevant to the result because the gate voltage was too low at these points, the MOSFET was in triode region instead of saturation.

iD vs. Vgs

iD(mA)

Vgs(V)

0.71 1.17 1.63 2.11 2.59 3.069999999999999 3.559999999999999 4.039 4.520999999999999 1.39 1.43 1.47 1.49 1.51 1.53 1.54 1.561 1.579