Computer Engineering Paper

Provide your perspective (~400 -500 words/ ~ 1 page [ no hard limit ]) on the potential value that any two of the following three new memory technologies, Phase Change Memory (PCM-RAMs), Spin-Transfer Torque RAMs (STT-RAMs), and Resistive RAMs (ReRAMs), add to the more mature memory technologies (SRAM and DRAM) studied in the lecture. Provide discussion on topics including, but not limited to: - What new features are enabled by these memories (compared to SRAM/DRAM)? More broadly, describe what the two technologies (of the three above ) that you've picked are, and how they fit into the existing memory landscape of FLASH, SRAM, DRAM, etc. - Which companies are engaged in their fabrication and design? - What are end-use products that could benefit from such new technologies (e.g. for the above companies or researchers, are there any envisioned products or application areas - if so, why are these technologies well-suited to these areas)? - Reviewing the current information on these technologies, what use case did you find most interesting?   --- Please remember to include relevant reference sources (URLs+dates are fine for web-based resources. For scholarly works, use any normal citation format) for your discussion at the end