Assessment Project on the GaAs/AlGaAs Stripe Geometry Laser

####################################################################### # GaAs/AlGaAs Stripe Geometry Laser # # Lateral mode instability in AlGaAs/GaAs strip geometry laser diode # # This input file demonstrates simulation of a the stripe geometry # # GaAs/AlGaAs laser diode. Physically based frequency dependent # # optical gain model is used in this example. # # # # Input File for EG-355 (Quantum Devices 3) # # by Karol Kalna # # (c) October 2020, Swansea University # # based on (c) Silvaco Inc., 2019 # ####################################################################### go atlas #go atlas simflag="-P 6" TITLE: GaAs/AlGaAs Stripe Geometry Laser ##################################################### # SECTION 1: Mesh Input ##################################################### # # All mesh dimensions in micro-meters [um]. mesh space.mult=1.0 diag.flip # X-direction mesh definition. x.mesh loc=-2.00 spac=0.5 x.mesh loc=0.00 spac=0.5 x.mesh loc=2 spac=0.2 x.mesh loc=7 spac=0.2 x.mesh loc=9.0 spac=0.5 x.mesh loc=11.00 spac=0.5 # Y-direction mesh definition. y.mesh loc=0.0 spac=0.1 y.mesh loc=0.5 spac=0.1 y.mesh loc=0.55 spac=0.025 y.mesh loc=0.7 spac=0.015 y.mesh loc=0.75 spac=0.0075 y.mesh loc=0.85 spac=0.0075 y.mesh loc=0.9 spac=0.015 y.mesh loc=1.05 spac=0.025 y.mesh loc=1.1 spac=0.1 y.mesh loc=2.1 spac=0.2 #################################################### # SECTION 2: Structure/Mesh Specification #################################################### # Define material regions # AlGaAs region num=1 material=AlGaAs x.min=-2 x.max=11.0 \ y.min=0.0 y.max=0.75 x.composition=0.5 # GaAs region num=2 material=GaAs x.min=-2 x.max=11 \ y.min=0.75 y.max=0.85 # AlGaAs region num=3 material=AlGaAs x.min=-2 x.max=11 \ y.min=0.85 y.max=2.1 x.composition=0.5 # Definition of the contact/electrodes elec num=1 name=anode x.min=3.0 x.max=6.0 y.min=0.0 y.max=0.0 elec num=2 name=cathode bottom # Define doping in the device. doping uniform reg=1 p.type conc=1.e18 doping uniform reg=2 n.type conc=4.e15 doping uniform reg=3 n.type conc=4.e17 ##################################################### # SECTION 3: Material Models and Parameters ##################################################### # Define material parameters: electron and hole Shockley-Read-Hall # recombination lifetimes, the total band to band generation/recombination, # bandgap difference between Material1 and Material2 material material=GaAs taun0=1.e-9 taup0=1.e-9 copt=1.5e-10 material material=AlGaAs taun0=1.e-9 taup0=1.e-9 copt=1.5e-10 align=0.6 # Select carrier mobility model and other physical models. model material=GaAs fldmob srh optr print model material=AlGaAs fldmob srh optr ##################################################### # SECTION 4: Initial Solution ##################################################### # Run solution at equilibrium solve init # Define additional outputs output con.band val.band #################################################### # Save to a structure file and then plot mesh, geometry, and doping profile. save outf=laser_geom.str tonyplot laser_geom.str -set laser_geom.set ##################################################### # SECTION 5: Used Methods ##################################################### method newton autonr trap maxtrap=6 climit=1e-6 ##################################################### # SECTION 6: I-V Characteristic Simulations ##################################################### solve vanode=0.1 solve vanode=0.2 # Ramp up the anode voltage. solve vanode=0.4 vstep=0.4 name=anode vfinal=1.2 #################################################### # SECTION 7: Laser Mesh Specification #################################################### # The location of mesh/grid lines along the <n>-axis in a rectangular mesh # used in Laser simulation. lx.m n=1 x=0 lx.m n=37 x=9 # ly.m n=1 y=0.5 ly.m n=33 y=1.1 ##################################################### # SECTION 8: Material Models and Parameters for Laser simulation ##################################################### models material=GaAs fldmob srh optr fermi print \ laser gainmod=1 las_maxch=100. \ las_xmin=0.1 las_xmax=8.9 las_ymin=0.5 las_ymax=1.1 \ photon_energy=1.43 las_nx=37 las_ny=33 spec.name=laserex03sp \ lmodes las_einit=1.415 las_efinal=1.47 cavity_length=100 ##################################################### # SECTION 9: Laser Simulations ##################################################### # Save results log outf=laser.log # Ramp up the anode voltage. solve vanode=1.3 vstep=0.05 name=anode vfinal=2.0 # Specifies current boundary conditions at the contact (Atlas manual p. 94) # If specified, CAPACITANCE, INDUCTANCE, or RESISTANCE may not be specified. contact num=1 current # Ramp up the current at the contact num=1. solve prev istep=0.0005 ifinal=0.004 electr=1 #################################################### # Save to a structure fie and then plot mesh, geometry, and doping profile. save outfile=laser_lin.str tonyplot laser.log -set laser_log.set tonyplot laser_lin.str -set laser_lin.set quit