ECET 220 Week3 ilab 3 Devry

Course Number: ECET220

Professor:

Laboratory Number: 3

Laboratory Title: Bipolar Junction Transistor Amplifier Circuit Analysis

Submittal Date: 1/25/2014

Objectives:

Given the schematic diagram of a Voltage-Divider based Common Emitter (CE) Amplifier:

1. Use amplifier parameters to evaluate the bipolar junction transistor (BJT) Common Emitter (CE) amplifier characteristics

2. Verify the bipolar junction transistor (BJT) voltage divider biased DC parameters through schematic theoretical analysis, simulated circuit analysis and constructed circuit analysis

3. Determine the phase angle between the input and output signal of the bipolar junction transistor (BJT) Common Emitter (CE) amplifier

Observations/Measurements:

III. A.  Theoretical Analysis: Please complete Table 1.

III. B. 2 & 3.   MultiSim Simulation: Please complete Table 2

1. What is the V_PP of the input signal V_in?

b.         What is the V_PP of the output signal V_out?

c. What is the phase angle between the input and output signals?

d. Calculate the voltage gain (A_V) of this amplifier?

III. B. 7. Captured input and output signal waveforms of the simulated circuit on the oscilloscope: Insert the captured simulation results here.

1. What is the V_PP of the input signal V_in?

b.   What is the V_PP of the output signal V_out?

  c. What is the phase angle between the input and output signals?

  d. Calculate the voltage gain (A_V) of this amplifier?

III. C. 1. Take the photos of your constructed circuit while measuring the BJT voltage-divider biased DC parameters (V_B, V_C, V_E, V_CE, V_BE, I_B, I_c, and I_E). Insert the photos here with proper captions.

III. C. 2 & 3. Constructed Circuit: Please complete Table 3